CAPACITANCE OF GALLIUM ARSENIDE AND SILICON ELECTRODES IN NANO₃ SOLUTIONS AND WATERWOLKENBERG A.1973; ROCZ. CHEM.; POLSKA; DA. 1973; VOL. 47; NO 5; PP. 975-980; ABS. POL. RUSSE; BIBL. 20 REF.Serial Issue

SUR LA PRECISION DE L'ANALYSE SPECTROCHIMIQUE DES STRUCTURES EPITAXIALESKARPEL NG; FEDORCHUK OK.1975; ZAVODSK. LAB.; S.S.S.R.; DA. 1975; VOL. 41; NO 2; PP. 169-172; BIBL. 10 REF.Article

OXIDE FILMS ON GAASLUKES F; NAVRATIL K; SOMMER I et al.1971; FOLIA FAC. SCI. NAT. UNIV. PURKYN. BRUN.; TCHECOSL.; DA. 1971; VOL. 12; NO 7; PP. 5-60; ABS. RUSSE; BIBL. 44 REF.Serial Issue

METHODE CHIMIQUE DE DEPOT D'OR SUR L'ARSENIURE DE GALLIUM A PARTIR DE SOLUTIONS D'ACIDE PHOSPHORIQUEVOZMILOVA LN; SERGEEVA EG.1972; ZH. PRIKL. KHIM.; S.S.S.R.; DA. 1972; VOL. 45; NO 5; PP. 1097-1098; BIBL. 3 REF.Serial Issue

DETERMINATION DES COEFF. DE DIFFUSION DE CU ET AU DANS GAAS A PARTIR DE LA QUANTITE D'IMPURETES PASSANT DANS L'ELECTROLYTE AU COURS DU PROCESSUS ANODIQUEMOLCHANOVA SA.1972; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1972; VOL. 46; NO 9; PP. 2373-2374; BIBL. 3 REF.Serial Issue

METHODE D'ANALYSE PAR ABSORPTION ATOMIQUE, PAR COUCHES, DES STRUCTURES EPITAXIALES DE GAAS AVEC SEPARATION CHROMATOGRAPHIQUE DE LA MATRICESVERDLINA OA; KUZOVLEV IA; SOLOMATIN VS et al.1975; ZAVODSK. LAB.; S.S.S.R.; DA. 1975; VOL. 41; NO 2; PP. 172-175; BIBL. 19 REF.Article

DIFFERENCES DES LOIS DE DECOMPOSITION D'UNE SOLUTION SOLIDE SURSATUREE DE CU DANS GAASMIL'VIDSKIJ MG; OSVENSKIJ VB; YUGOVA TG et al.1972; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1972; VOL. 8; NO 8; PP. 1368-1372; BIBL. 7 REF.Serial Issue

INTERACTION DE GAAS AVEC LA VAPEUR D'IODEFAJNER NI; RUMYANTSEV YU M; TITOV VA et al.1980; IZV. SIB. OTD. AKAD. NAUK SSSR, SER. HIM. NAUK; ISSN 0002-3426; SUN; DA. 1980; NO 5; PP. 72-77; ABS. ENG; BIBL. 6 REF.Article

EFFET DE L'INDIUM, DU GALLIUM ET DE L'ETAIN SUR L'INTENSITE DES LIGNES SPECTRALES D'UNE SERIE D'ELEMENTSTIKHONOVA OK; OTMAKHOVA ZI; KATAEV GA et al.1973; ZH. PRIKL. SPEKTROSK., BELORUS. S.S.R.; S.S.S.R.; DA. 1973; VOL. 18; NO 3; PP. 382-385; BIBL. 7 REF.Serial Issue

ADSORPTION DE LA VAPEUR D'EAU SUR GAAS, ZNSE ET LEURS SOLUTIONS SOLIDESKIROVSKAYA IA; MILIKOVA GM; YUR'EVA AV et al.1974; ZH FIZ. KHIM.; S.S.S.R.; DA. 1974; VOL. 48; NO 5; PP. 1227-1229; BIBL. 13 REF.Article

MOTT-SCHOTTKY ANALYSES ON N- AND P-GAAS/ROOM TEMPERATURE CHLOROALUMINATE MOLTEN-SALT INTERFACESTHAPAR R; RAJESHWAR K.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 2; PP. 195-198; BIBL. 12 REF.Article

ETUDE ELLIPSOMETRIQUE DE LA CINETIQUE D'OXYDATION ANODIQUE DE GAASGROMOV AI; LYASHENKO AV; TARANTOV YU A et al.1981; ELEKTROHIMIJA; ISSN 0424-8570; SUN; DA. 1981; VOL. 17; NO 2; PP. 318-321; BIBL. 7 REF.Article

DESORPTION PROPERTIES OF SB ON A GAAS (100) SURFACENAGANUMA M; MIYAZAWA S; IWASAKI H et al.1980; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1980; VOL. 17; NO 2; PP. 606-608; BIBL. 16 REF.Article

HIGH-EFFICIENCY GAAS PHOTOANODESNOUFI R; TENCH D.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 1; PP. 188-190; BIBL. 10 REF.Article

OXYDATION THERMIQUE DE L'ARSENIURE DE GALLIUMCROSET M; MERCANDALLI LM.1980; ; FRA; DA. 1980; DGRST/78 7 2155; 42 P.; 30 CM; BIBL. 17 REF.; ACTION CONCERTEE: PHYSIQUE ELECTRONIQUEReport

CHEMICALLY-DERIVATIZED N-TYPE SEMICONDUCTING GALLIUM ARSENIDE PHOTOELECTRODES. THERMODYNAMICALLY UPHILL OXIDATION OF SURFACE-ATTACHED FERROCENE CENTERSBOLTS JM; WRIGHTON MS.1979; J. AMER. CHEM. SOC.; USA; DA. 1979; VOL. 101; NO 21; PP. 6179-6184; BIBL. 30 REF.Article

EVIDENCE FOR KINETIC CONTROL OF ANODIC DARK AND PHOTODISSOLUTION OF N-III-V-SEMICONDUCTORS WITH ELECTRONS AND HOLESLORENZ W; WOLF B.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 2; PP. 191-194; BIBL. 9 REF.Article

THE INFLUENCE OF SURFACE RECOMBINATION AND TRAPPING ON THE CATHODIC PHOTOCURRENT AT P-TYPE III-V ELECTRODESKELLY JJ; MEMMING R.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 730-738; BIBL. 35 REF.Article

PHOTOELECTROCHEMICAL BEHAVIOUR OF AN N-TYPE GAAS ELECTRODE STUDIED BY IMPEDANCE MEASUREMENTS. DETERMINATION AND SIMULATION OF THE FARADAIC RESISTANCEALLONGUE P; CACHET H.1981; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; ISSN 0022-0728; CHE; DA. 1981; VOL. 119; NO 2; PP. 371-377; BIBL. 12 REF.Article

INFLUENCE OF CURRENT DENSITY ON THE COMPOSITION OF GAAS ANODIC OXIDE FILMSCROSET M; DIAZ J; DIEUMEGARD D et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1543-1547; BIBL. 19 REF.Article

LOCALIZED AVALANCHE BREAKDOWN ON GAAS ELECTRODES IN AQUEOUS ELECTROLYTESTRANCHART JC; HOLLAN L; MEMMING R et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 7; PP. 1185-1187; BIBL. 13 REF.Article

INFLUENCE OF ILLUMINATION ON THE ADMITTANCE OF GAAS AND GAP ELECTRODESWOLF B; LORENZ W.1983; ELECTROCHIMICA ACTA; ISSN 0013-4686; GBR; DA. 1983; VOL. 28; NO 5; PP. 699-702; BIBL. 6 REF.Article

EFFECT OF DISCONTINUOUS GOLD FILMS ON GA-AS-ELECTROLYTE CONTACT PROPERTIESDMITRUK NL; KOLBASOV GY; MAYEVA OI et al.1981; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1981; VOL. 75; NO 4; PP. 341-346; BIBL. 8 REF.Article

ETUDE DES PROPRIETES DE SURFACE DANS LES SYSTEMES GAAS(ZNSE)-GA, SNSOKOLOVSKIJ KA; NOVIKOVA EH M; ERSHOVA SA et al.1979; ZH. FIZ. KHIM.; SUN; DA. 1979; VOL. 53; NO 7; PP. 1868-1870; BIBL. 7 REF.Article

THE N-GAAS/ELECTROLYTE INTERFACE: EVIDENCE FOR SPECIFICITY IN LATTICE ION-ELECTROLYTE INTERACTIONS, DEPENDENCE OF INTERFACIAL POTENTIAL DROPS ON CRYSTAL PLANE ORIENTATION TO THE ELECTROLYTE, AND IMPLICATIONS FOR SOLAR ENERGY CONVERSIONRAJESHWAR K; MRAZ T.1983; JOURNAL OF PHYSICAL CHEMISTRY; ISSN 0022-3654; USA; DA. 1983; VOL. 87; NO 5; PP. 742-744; BIBL. 24 REF.Article